VRF148A 50v, 30w, 175mhz the VRF148A is a gold-metallized silicon n-channel rf power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. features ? improved ruggedness v (br)dss = 170 v ? 30w with 20db typical gain @ 30mhz, 50v ? 30w with 16db typical gain @ 175mhz, 50v ? excellent stability & low imd ? common source con guration ? rohs compliant ? 30:1 load vswr capability at speci ed operating conditions ? nitride passivated ? refractory gold metallization ? high voltage replacement for mrf148a symbol parameter VRF148A unit v dss drain-source voltage 170 v i d continuous drain current @ t c = 25c 6 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 115 w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speci ed static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 1ma) 170 v v ds(on) on state drain voltage (i d(on) = 2.5a, v gs = 10v) 3.0 5.0 i dss zero gate voltage drain current (v ds = 100v, v gs = 0v) 0.1 ma i gss gate-source leakage current (v ds = 20v, v ds = 0v) 1.0 a g fs forward transconductance (v ds = 10v, i d = 2.5a) 0.8 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 10ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com 050-4943 rev b 3-2008 thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 1.52 c/w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed.
0.1 1 10 1 10 100 200 VRF148A dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 160 pf c oss output capacitance v ds = 50v 40 c rss reverse transfer capacitance f = 1mhz 2.6 class a characteristics symbol test conditions min typ max unit g ps f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 1.0a, p out = 10w pep 20 db imd (d3) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 1.0a, p out = 10w pep -50 imd (d9-d13) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 1.0a, p out = 10w pep -70 functional characteristics symbol parameter min typ max unit g ps f 1 = 30mhz, v dd = 50v, i dq = 100ma, p out = 30w 18 db g ps f 1 = 175mhz, v dd = 50v, i dq = 100ma, p out = 30w 16 f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 100ma, 30 w pep 40 % f 1 = 30mhz, v dd = 50v, i dq = 100ma, 30 w cw 50 imd (d3) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 100ma, p out = 30w pep 1 -35 -28 db imd (d11) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 100ma, p out = 30w pep -60 f 1 = 30mhz, f 2 = 30.001mhz ,v dd = 50v, i dq = 100ma, p out = 300w pep 30:1 vswr - all phase angles no degradation in output power 1. to mil-std-1311 version a, test method 2204b, two tone, reference each tone microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-4943 rev b 3-2008 0 10 20 30 40 50 60 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 1 10 100 0 10 20 30 40 50 60 v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) v ds , gate-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance (pf) v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (v) v ds , drain-to-source voltage (v) figure 2, transfer characteristics typical performance curves 4v 5v 6v 7v 8v 9v 10v 13v t j = 125c 250 s pulse test<0.5 % duty cycle t j = -55c t j = 25c c iss c oss c rss r ds(on) t j = 125c t c = 75c pdmax i dmax
? 50 ? 45 ? 40 ? 35 ? 30 0 10 20 30 40 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 0 ? 50 ? 45 ? 40 ? 35 ? 30 0 10 20 30 40 VRF148A 050-4943 rev b 3-2008 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -5 10 -4 10 -3 10 -2 10 1.0 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration typical performance curves p out , output power (watts pep) figure 7. imd versus p out imd, intermodulation distortion (db) output power (w pep ) p out , input power (watts pep) figure 8. p in versus p out output power (w pep ) p out , input power (watts pep) figure 9. p in versus p out vdd=28v, idq = 250ma, freq=175mhz im3 im5 0 10 20 30 40 50 60 0 1 2 3 4 5 vdd=28v, idq = 250ma, freq=30mhz vdd=28v, idq = 250ma, freq=175mhz p out , output power (watts pep) figure 6. imd versus p out imd, intermodulation distortion (db) vdd=28v, idq = 250ma, freq=30mhz im3 im5
VRF148A 050-4943 rev b 3-2008 30 mhz test circuit 175 mhz test circuit
microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 and foreign patents. us and foreign patents pending. all rights reserved. pin 1 - source pin 2 - gate pin 3 - source pin 4 - drain m113 package outline .375? soe all dimensions to be .005 dim inches millimeters min max min max a 0.096 0.990 24.39 25.14 b 0.370 0.390 9.40 9.90 c 0.229 0.281 5.82 7.13 d 0.215 0.235 5.47 5.96 e 0.085 0.105 2.16 2.66 h 0.150 0.108 3.81 4.57 j 0.004 0.006 0.11 0.15 k 0.395 0.405 10.04 10.28 m4050 40 50 q 0.113 0.130 2.88 3.30 r 0.245 0.255 6.23 6.47 s 0.790 0.810 20.07 20.57 u 0.720 0.730 18.29 18.54 a u m m q r b 1 4 3 2 d k e c j h s VRF148A 050-4943 rev b 3-2008
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